Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing
نویسندگان
چکیده
Abstract The hardware implementation of artificial neural networks requires synaptic devices with linear and high‐speed weight modulation. Memristors as a candidate suffer from excessive write variation asymmetric resistance modulation that inherently rooted in their stochastic mechanisms. Thanks to controllable ion intercalation/deintercalation mechanism, electrolyte‐gated transistors (EGTs) hold prominent switching linearity low variation, thus have been the promising alternative for devices. However, operation frequency EGTs is seriously limited by time required state stabilization, is, write‐read delay after each set/reset operation. Here, Li‐ion‐based EGT (Li‐EGT) 3 ms along multistates, energy consumption, quasi‐linear update introduced. origin short device attributed permeable interface between electrolyte gate electrode. Leveraging Li‐EGT characteristic, near‐ideal accuracy (≈94%) on handwritten digital image data set has achieved corresponding network simulation. These results provide an insight into development Li‐EGTs neuromorphic computing.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2022
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202200915